|Radiating element area||40 mm²|
|Radiating element emissivity||> 0.9|
|Radiating element temperature||630 °C at 2.5 W|
|Optical output power||up to 620 mW|
|Max. electrical power (DC)||2.5 W|
|Max. electrical voltage||3.8 V|
|Max. electrical current||660 mA|
|Electrical cold resistance||5.5 +/- 1 Ω|
|Electrical hot resistance||5.5 +/- 1 Ω|
|Modulation frequency||4 Hz*|
|Wavelength range||2 to 6 µm|
|Input voltage (V_in)||(4.3 … 6) V|
|Pulse signal voltage Low/OFF||(0 … 1) V|
|Pulse signal voltage High/ON||1.5 V … V_in|
|Drive power||2500 mW|
The Driver Circuit Board supports a quick evaluation of our IR emitters. Only a supply voltage and a pulse signal have to be applied to the 3-pin Molex PicoBlade 1.25 mm connector. For more information about its function, see our technical note.
All our emitters comply with the following JEDEC-standards:
(temperature cycling and shock test: -45 °C / + 90 °C, 100 cycles)
(vibration test: log. sweep 20 Hz…2000 Hz, peak 20 g, X/Y/Z direction)
(drop test: 5000 m/s², 6 directions)
HISpower series emitters have an integrated gold plated reflector that directs the radiation emitted from the rear to the front through the housing window in order to achieve maximum efficiency. All our emitters offer minimum drift at a constant electrical resistance. Infrasolids IR emitters are characterized by a very low temperature coefficient of electrical resistance. Therefore the hot resistance and the cold resistance are almost identical which eases the electrical control of the IR sources. Infrasolid’s advanced packaging technology allows soldered sapphire, CaF₂ and BaF₂ windows for use in a wide temperature range of -25 °C up to +85 °C.
Infrasolid’s infrared radiation sources are pulsable thermal emitters with a near black-body emittance. Based on a patented nanotechnology and a patented emitter set-up made of a high-melting metal, the free-standing monolithic radiating element and the nanostructured emitter surface offer numerous advantages in many applications.